Diodes Incorporated
FMMT411FDBWQ-7
Bipolar Transistors - BJT Avalanche Transistor W-DFN2020-3/SWP T&R 3K
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Series
- FMMT411FDBWQ-7
- Package
- W-DFN2020-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
14 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 80 V
- Collector- Base Voltage VCBO
- 80 V
- Emitter- Base Voltage VEBO
- 7 V
- Collector-Emitter Saturation Voltage
- 100 mV
- Pd - Power Dissipation
- 1.8 W
- Gain Bandwidth Product fT
- 110 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- 5 A
Show more parameters (2)
- Country of Origin
- CN
- DC Collector/Base Gain hfe Min
- 100 at 10 mA, 10 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.