Toshiba
TK10A80W,S4X
MOSFET N-Ch 800V 1150pF 19nC 9.5A 40W
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- MOSFET
- Series
- TK10A80W
- Package
- TO-220SIS-3
- Mounting Style
- Through Hole
- RoHS
- Compliant (source record)
Technical Specifications
20 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 800 V
- Id - Continuous Drain Current
- 9.5 A
- Rds On - Drain-Source Resistance
- 460 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 3 V
- Vgs - Gate-Source Voltage
- 20 V
- Qg - Gate Charge
- 19 nC
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 40 W
- Configuration
- Single
Show more parameters (8)
- Channel Mode
- Enhancement
- Tradename
- DTMOSIV
- Transistor Type
- 1 N-Channel
- Fall Time
- 10 ns
- Rise Time
- 35 ns
- Typical Turn-Off Delay Time
- 120 ns
- Typical Turn-On Delay Time
- 65 ns
- Unit Weight
- 0.068784 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.