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Wolfspeed / Cree

CGHV40200PP

RF JFET Transistors GaN HEMT DC-2.5GHz, 180 Watt

Basic Information

View Datasheet ↗
Manufacturer
Cree, Inc.
Brand
Wolfspeed / Cree
Product Category
RF JFET Transistors
Package
440199
Mounting Style
Screw Mount
Packaging
Tray
RoHS
Compliant (source record)

Technical Specifications

15 parameters
Transistor Type
HEMT
Technology
GaN
Gain
16.1 dB
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
150 V
Vgs - Gate-Source Breakdown Voltage
- 10 V, 2 V
Id - Continuous Drain Current
8.7 A
Output Power
250 W
Minimum Operating Temperature
- 40 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
166 W
Configuration
Single
Show more parameters (3)
Operating Frequency
1.7 GHz to 1.9 GHz
Development Kit
CGHV40200PP-AMP1
Vgs th - Gate-Source Threshold Voltage
- 3 V

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

CGHV40200PP Specifications and Datasheet | ChipSourceHub