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ROHM Semiconductor

EMX51T2R

Bipolar Transistors - BJT Bipolar Transistor SOT-563 SC-107C EMT6

Basic Information

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Manufacturer
ROHM Semiconductor
Product Category
Bipolar Transistors - BJT
Package
SOT-563-6
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

13 parameters
Transistor Polarity
NPN
Configuration
Dual
Collector- Emitter Voltage VCEO Max
20 V
Collector- Base Voltage VCBO
20 V
Emitter- Base Voltage VEBO
5 V
Collector-Emitter Saturation Voltage
120 mV
Maximum DC Collector Current
200 mA
Gain Bandwidth Product fT
400 MHz
DC Current Gain hFE Max
560
Continuous Collector Current
200 mA
DC Collector/Base Gain hfe Min
120
Pd - Power Dissipation
150 mW
Show more parameters (1)
Part # Aliases
EMX51

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

EMX51T2R Specifications and Datasheet | ChipSourceHub