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IXYS

IXFA34N65X3

MOSFETs TO263 650V 34A N-CH X3CLASS

Basic Information

View Datasheet ↗
Manufacturer
IXYS
Product Category
MOSFETs
Package
TO-263-3
Mounting Style
SMD/SMT
Packaging
Tube

Technical Specifications

21 parameters
Technology
Si
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
650 V
Id - Continuous Drain Current
34 A
Rds On - Drain-Source Resistance
100 mOhms
Vgs - Gate-Source Voltage
- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage
5.2 V
Qg - Gate Charge
29 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
446 W
Show more parameters (9)
Channel Mode
Enhancement
Configuration
Single
Country of Origin
KR
Fall Time
6 ns
Forward Transconductance - Min
13 S
Rise Time
10 ns
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
47 ns
Typical Turn-On Delay Time
24 ns

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

IXFA34N65X3 Specifications and Datasheet | ChipSourceHub