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Vishay / Siliconix

SIRA32DP-T1-RE3

MOSFET 25V Vds 16V Vgs PowerPAK SO-8

Basic Information

View Datasheet ↗
Manufacturer
Vishay
Brand
Vishay / Siliconix
Product Category
MOSFET
Series
SIR
Package
PowerPAK-SO-8
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

20 parameters
Technology
Si
Number of Channels
1 Channel
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
25 V
Id - Continuous Drain Current
60 A
Rds On - Drain-Source Resistance
1 mOhms
Vgs th - Gate-Source Threshold Voltage
2.2 V
Vgs - Gate-Source Voltage
16 V, - 12 V
Qg - Gate Charge
55 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
65.7 W
Show more parameters (8)
Configuration
Single
Tradename
TrenchFET, PowerPAK
Transistor Type
1 N-Channel
Fall Time
10 ns
Rise Time
23 ns
Typical Turn-Off Delay Time
24 ns
Typical Turn-On Delay Time
14 ns
Unit Weight
0.017870 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

SIRA32DP-T1-RE3 Specifications and Datasheet | ChipSourceHub