NXP Semiconductors
AFIC31025NR1
RF MOSFET Transistors Airfast RF Power Integrated Power Amplifier, 25 W Pulse over 2400-3100 MHz, 32 V
Basic Information
View Datasheet ↗- Manufacturer
- NXP
- Brand
- NXP Semiconductors
- Product Category
- RF MOSFET Transistors
- Package
- TO-270WB-17
- Mounting Style
- SMD/SMT
- Packaging
- Reel
Technical Specifications
16 parameters- Transistor Polarity
- Dual N-Channel
- Technology
- Si
- Id - Continuous Drain Current
- 200 mA
- Vds - Drain-Source Breakdown Voltage
- - 500 mV, 65 V
- Gain
- 31.9 dB
- Output Power
- 25 W
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 150 C
- Operating Frequency
- 2400 MHz to 3100 MHz
- Type
- RF Power MOSFET
- Number of Channels
- 2 Channel
- Moisture Sensitive
- Yes
Show more parameters (4)
- Vgs - Gate-Source Voltage
- - 0.5 V, 10 V
- Vgs th - Gate-Source Threshold Voltage
- 0.8 V
- Part # Aliases
- 935343962528
- Unit Weight
- 0.055740 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.