ON Semiconductor
NJL1302DG
Bipolar Transistors - BJT PNPBIP PWR THERM TRK PPD
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- NJL1302D
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 260 V
- Collector- Base Voltage VCBO
- 260 V
- Emitter- Base Voltage VEBO
- 5 V
- Maximum DC Collector Current
- 15 A
- Gain Bandwidth Product fT
- 30 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Height
- 25.98 mm
- Length
- 19.89 mm
- Width
- 4.89 mm
Show more parameters (3)
- DC Collector/Base Gain hfe Min
- 75
- Pd - Power Dissipation
- 200000 mW
- Unit Weight
- 0.010582 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.