onsemi
NSS40300MDR2G
Bipolar Transistors - BJT 40V 6A LOW VCE(SAT) DUAL PNP
Basic Information
View Datasheet ↗- Manufacturer
- onsemi
- Product Category
- Bipolar Transistors - BJT
- Series
- NSS40300MD
- Package
- SOIC-8
- Mounting Style
- SMD/SMT
- Packaging
- MouseReel
Technical Specifications
16 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Dual
- Maximum DC Collector Current
- 3 A
- Collector- Emitter Voltage VCEO Max
- 40 V
- Collector- Base Voltage VCBO
- 40 V
- Emitter- Base Voltage VEBO
- 7 V
- Collector-Emitter Saturation Voltage
- 135 mV
- Pd - Power Dissipation
- 783 mW
- Gain Bandwidth Product fT
- 100 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
Show more parameters (4)
- Country of Origin
- PH
- DC Collector/Base Gain hfe Min
- 250 at 10 mA, 2 V, 220 at 500 mA, 2 V, 180 at 1 A, 2 V, 150 at 2 A, 2 V
- DC Current Gain hFE Max
- 250 at 10 mA, 2 V
- Unit Weight
- 0.005044 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.