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ON Semiconductor

NSVBC124EPDXV6T1G

Bipolar Transistors - Pre-Biased SS SOT563 DUAL RSTR XSTR

Basic Information

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Manufacturer
ON Semiconductor
Product Category
Bipolar Transistors - Pre-Biased
Series
NSBC124EPDXV6
Package
SOT-563-6
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

12 parameters
Configuration
Dual
Transistor Polarity
NPN, PNP
Typical Input Resistor
22 kOhms
Typical Resistor Ratio
1
DC Collector/Base Gain hfe Min
100
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
100 mA
Pd - Power Dissipation
500 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Output Voltage
0.2 VDC
Qualification
AEC-Q101

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

NSVBC124EPDXV6T1G Specifications and Datasheet | ChipSourceHub