ROHM Semiconductor
2SC4102U3T106R
Bipolar Transistors - BJT Transistor for high-volt amp
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Package
- SOT-323-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
13 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 120 V
- Collector- Base Voltage VCBO
- 120 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 500 mV
- Pd - Power Dissipation
- 200 mW
- Gain Bandwidth Product fT
- 140 MHz
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 560
- Technology
- Si
- Continuous Collector Current
- 50 mA
Show more parameters (1)
- DC Collector/Base Gain hfe Min
- 180
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.