Central Semiconductor
2N6212
Bipolar Transistors - BJT PNP 350Vcbo 300Vceo 6.0Vebo 2.0A 35W
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N6212
- Package
- TO-66-2
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 300 V
- Collector- Base Voltage VCBO
- 350 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 1.6 V
- Maximum DC Collector Current
- 5 A
- Pd - Power Dissipation
- 35 W
- Gain Bandwidth Product fT
- 20 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 200 C
- DC Current Gain hFE Max
- 100
Show more parameters (4)
- Technology
- Si
- Continuous Collector Current
- 2 A
- DC Collector/Base Gain hfe Min
- 10
- Part # Aliases
- 2N6212 PBFREE
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.