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Infineon Technologies

BSL314PEH6327XTSA1

MOSFET SMALL SIGNAL+P-CH

Basic Information

View Datasheet ↗
Manufacturer
Infineon
Brand
Infineon Technologies
Product Category
MOSFET
Package
TSOP-6
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

25 parameters
Technology
Si
Number of Channels
1 Channel
Transistor Polarity
P-Channel
Vds - Drain-Source Breakdown Voltage
30 V
Id - Continuous Drain Current
1.5 A
Rds On - Drain-Source Resistance
230 mOhms
Vgs th - Gate-Source Threshold Voltage
2 V
Vgs - Gate-Source Voltage
20 V
Qg - Gate Charge
- 700 pC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
500 mW
Show more parameters (13)
Configuration
Single
Channel Mode
Enhancement
Height
1.1 mm
Length
3 mm
Transistor Type
2 P-Channel
Width
1.5 mm
Forward Transconductance - Min
3 S
Fall Time
2.8 ns
Rise Time
3.9 ns
Typical Turn-Off Delay Time
12.4 ns
Typical Turn-On Delay Time
5.1 ns
Part # Aliases
BSL314PE H6327 SP001101006
Unit Weight
0.000522 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

BSL314PEH6327XTSA1 Specifications and Datasheet | ChipSourceHub