Toshiba
RN2911,LF
Bipolar Transistors - Pre-Biased US6-PLN
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - Pre-Biased
- Series
- RN2911
- Package
- US-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
13 parameters- Transistor Polarity
- PNP
- Typical Input Resistor
- 10 kOhms
- DC Collector/Base Gain hfe Min
- 120
- Collector- Emitter Voltage VCEO Max
- - 50 V
- Continuous Collector Current
- - 100 mA
- Pd - Power Dissipation
- 200 mW
- Collector- Base Voltage VCBO
- - 50 V
- Emitter- Base Voltage VEBO
- - 5 V
- Height
- 0.9 mm
- Length
- 2 mm
- Type
- PNP Epitaxial Silicon Transistor
- Width
- 1.25 mm
Show more parameters (1)
- Maximum DC Collector Current
- - 100 mA
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.