Central Semiconductor
PMD12K100
Bipolar Transistors - BJT NPN 8.0A 100Vcev 100Vceo 2.0V 100W
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Package
- TO-3-2
- Mounting Style
- Through Hole
- Packaging
- Tray
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 100 V
- Collector- Base Voltage VCBO
- 100 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 2 V
- Maximum DC Collector Current
- 8 A
- Gain Bandwidth Product fT
- 4 MHz
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 20000
- Continuous Collector Current
- 8 A
Show more parameters (2)
- DC Collector/Base Gain hfe Min
- 1000
- Pd - Power Dissipation
- 100 W
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.