onsemi
FDMS10C4D2N
MOSFETs Energy Inversion DC-AC
Basic Information
View Datasheet ↗- Manufacturer
- onsemi
- Product Category
- MOSFETs
- Series
- FDMS10C4D2N
- Package
- Power-56-8
- Mounting Style
- SMD/SMT
- Packaging
- MouseReel
Technical Specifications
17 parameters- Technology
- Si
- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 100 V
- Id - Continuous Drain Current
- 17 A
- Rds On - Drain-Source Resistance
- 4.2 mOhms
- Vgs - Gate-Source Voltage
- - 20 V, 20 V
- Vgs th - Gate-Source Threshold Voltage
- 2 V
- Qg - Gate Charge
- 65 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 2.5 W
Show more parameters (5)
- Channel Mode
- Enhancement
- Tradename
- PowerTrench
- Configuration
- Single
- Country of Origin
- MY
- Unit Weight
- 0.003175 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.