Central Semiconductor
2N2714 TIN/LEAD
Bipolar Transistors - BJT NPN 18Vcbo 18Vceo 5.0Vebo 18Vcb
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N2714
- Package
- TO-92-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
Technical Specifications
9 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Base Voltage VCBO
- 18 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 1.2 V
- Continuous Collector Current
- 50 mA
- DC Collector/Base Gain hfe Min
- 75 at 0.3 V, 50 mA
- DC Current Gain hFE Max
- 250 at 0.3 V, 50 mA
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.