MACOM
CGH40006P
GaN FETs GaN HEMT DC-6.0GHz, 6 Watt
Basic Information
View Datasheet ↗- Manufacturer
- MACOM
- Product Category
- GaN FETs
- Package
- 440109
- Mounting Style
- SMD/SMT
- Packaging
- Tray
Technical Specifications
18 parameters- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 120 V
- Id - Continuous Drain Current
- 750 mA
- Vgs th - Gate-Source Threshold Voltage
- - 3 V
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 150 C
- Configuration
- Single
- Country of Origin
- US
- Development Kit
- CGH40006P-TB
- Gain
- 13 dB
- Maximum Operating Frequency
- 6 GHz
- Minimum Operating Frequency
- 2 GHz
Show more parameters (6)
- Output Power
- 9 W
- Product
- GaN HEMTs
- Technology
- GaN
- Transistor Type
- GaN HEMT
- Vgs - Gate-Source Breakdown Voltage
- - 10 V to 2 V
- Unit Weight
- 0.162437 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.