STMicroelectronics
BD139-10
Bipolar Transistors - BJT NPN Silicon Trnsistr
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- Bipolar Transistors - BJT
- Series
- BD139
- Package
- SOT-32-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 80 V
- Collector- Base Voltage VCBO
- 80 V
- Emitter- Base Voltage VEBO
- 5 V
- Maximum DC Collector Current
- 1.5 A
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Height
- 10.8 mm
- Length
- 7.8 mm
- Width
- 2.7 mm
- DC Collector/Base Gain hfe Min
- 63
Show more parameters (2)
- Pd - Power Dissipation
- 1250 mW
- Unit Weight
- 0.002116 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.