ON Semiconductor
SBC846ALT1G
Bipolar Transistors - BJT SS GP XSTR NPN 65V
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- BC846ALT1
- Package
- SOT-23-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
12 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 65 V
- Emitter- Base Voltage VEBO
- 6 V
- Maximum DC Collector Current
- 100 mA
- Gain Bandwidth Product fT
- 100 MHz
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- 100 mA
- DC Collector/Base Gain hfe Min
- 110
- Pd - Power Dissipation
- 225 mW
- Qualification
- AEC-Q101
- Unit Weight
- 0.000282 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.