Toshiba
SSM3J112TU,LF
MOSFET Small-signal MOSFET ID=-1.1A VDSS=-30V
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- MOSFET
- Series
- SSM3J112TU
- Package
- UFM-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
17 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- P-Channel
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Id - Continuous Drain Current
- 1.1 A
- Rds On - Drain-Source Resistance
- 310 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 1.8 V
- Vgs - Gate-Source Voltage
- 20 V
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 800 mW
- Configuration
- Single
- Channel Mode
- Enhancement
Show more parameters (5)
- Transistor Type
- 1 P-Channel
- Forward Transconductance - Min
- 0.5 S
- Typical Turn-Off Delay Time
- 8.5 ns
- Typical Turn-On Delay Time
- 14 ns
- Unit Weight
- 0.000233 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.