IXYS
IXSA110N65L2-7TR
SiC MOSFETs 650V 25mohm (110A a. 25C) SiC MOSFET in TO263-7L
Basic Information
View Datasheet ↗- Manufacturer
- IXYS
- Product Category
- SiC MOSFETs
- Package
- TO-263-7L
- Mounting Style
- SMD/SMT
- Packaging
- MouseReel
Technical Specifications
21 parameters- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 650 V
- Id - Continuous Drain Current
- 111 A
- Rds On - Drain-Source Resistance
- 33 mOhms
- Vgs - Gate-Source Voltage
- - 5 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage
- 4.5 V
- Qg - Gate Charge
- 125 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 600 W
- Channel Mode
- Enhancement
Show more parameters (9)
- Configuration
- Single
- Country of Origin
- CN
- Fall Time
- 11.5 ns
- Product
- MOSFETs
- Rise Time
- 23.4 ns
- Technology
- SiC
- Transistor Type
- 1 N-Channel
- Typical Turn-Off Delay Time
- 35.1 ns
- Typical Turn-On Delay Time
- 13 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.