MACOM
CGHV1F006S
GaN FETs GaN HEMT DC-18GHz, 6 Watt
Basic Information
View Datasheet ↗- Manufacturer
- MACOM
- Product Category
- GaN FETs
- Package
- DFN-12
- Mounting Style
- SMD/SMT
- Packaging
- MouseReel
Technical Specifications
17 parameters- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 100 V
- Id - Continuous Drain Current
- 950 mA
- Vgs th - Gate-Source Threshold Voltage
- - 3 V
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 150 C
- Configuration
- Single
- Country of Origin
- US
- Gain
- 16 dB
- Maximum Operating Frequency
- 18 GHz
- Minimum Operating Frequency
- 0 Hz
- Moisture Sensitive
- Yes
Show more parameters (5)
- Output Power
- 6 W
- Technology
- GaN
- Transistor Type
- GaN HEMT
- Vgs - Gate-Source Breakdown Voltage
- - 10 V to 2 V
- Unit Weight
- 0.051120 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.