Vishay / Siliconix
SIA112LDJ-T1-GE3
MOSFETs N-CHANNEL 100-V (D-S) MOSFET
Basic Information
View Datasheet ↗- Manufacturer
- Vishay
- Brand
- Vishay / Siliconix
- Product Category
- MOSFETs
- Series
- SIA
- Package
- SC-70-6
- Mounting Style
- SMD/SMT
- Packaging
- MouseReel
Technical Specifications
20 parameters- Technology
- Si
- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 100 V
- Id - Continuous Drain Current
- 8.8 A
- Rds On - Drain-Source Resistance
- 119 mOhms
- Vgs - Gate-Source Voltage
- - 20 V, 20 V
- Vgs th - Gate-Source Threshold Voltage
- 2.5 V
- Qg - Gate Charge
- 2.7 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 15 W
Show more parameters (8)
- Channel Mode
- Enhancement
- Configuration
- Single
- Country of Origin
- CN
- Fall Time
- 7 ns
- Forward Transconductance - Min
- 17 S
- Rise Time
- 26 ns
- Typical Turn-Off Delay Time
- 14 ns
- Typical Turn-On Delay Time
- 15 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.