ChipSourceHub

Toshiba

TPW5200FNH,L1Q

MOSFET X35 Pb-F POWER MOSFET TRANSISTOR DSOP-ADV PD=142W F=1MHZ

Basic Information

View Datasheet ↗
Manufacturer
Toshiba
Product Category
MOSFET
Series
TPW5200FNH
Package
DSOP-8
Mounting Style
SMD/SMT
Packaging
Reel
RoHS
Compliant (source record)

Technical Specifications

19 parameters
Technology
Si
Number of Channels
1 Channel
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
250 V
Id - Continuous Drain Current
27 A
Rds On - Drain-Source Resistance
52 mOhms
Vgs th - Gate-Source Threshold Voltage
2 V
Vgs - Gate-Source Voltage
20 V
Qg - Gate Charge
22 nC
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
142 W
Configuration
Single
Show more parameters (7)
Channel Mode
Enhancement
Tradename
U-MOSVIII-H
Transistor Type
1 N-Channel
Fall Time
12 ns
Rise Time
8 ns
Typical Turn-Off Delay Time
36 ns
Typical Turn-On Delay Time
20 ns

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

TPW5200FNH,L1Q Specifications and Datasheet | ChipSourceHub