Diodes Incorporated
ZXTP56060FDBQ-7
Bipolar Transistors - BJT 60V Dual PNP Transistor
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Series
- ZXTP56060FDBQ
- Package
- U-DFN2020-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- - 60 V
- Collector- Base Voltage VCBO
- - 60 V
- Emitter- Base Voltage VEBO
- - 7 V
- Collector-Emitter Saturation Voltage
- - 450 mV
- Maximum DC Collector Current
- - 2 A
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- - 2 A
- DC Collector/Base Gain hfe Min
- 50
Show more parameters (3)
- Pd - Power Dissipation
- 2.47 W
- Qualification
- AEC-Q101
- Unit Weight
- 0.000229 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.