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Toshiba

RN2105MFV(TPL3)

Bipolar Transistors - Pre-Biased 100mA -50volts 3Pin 2.2K x 47Kohms

Basic Information

View Datasheet ↗
Manufacturer
Toshiba
Product Category
Bipolar Transistors - Pre-Biased
Series
RN2105MFV
Mounting Style
SMD/SMT
Packaging
Reel
RoHS
Compliant (source record)

Technical Specifications

12 parameters
Configuration
Single
Transistor Polarity
PNP
Typical Input Resistor
2.2 kOhms
Typical Resistor Ratio
0.047
DC Collector/Base Gain hfe Min
80
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
- 100 mA
Peak DC Collector Current
100 mA
Pd - Power Dissipation
150 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
DC Current Gain hFE Max
80

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

RN2105MFV(TPL3) Specifications and Datasheet | ChipSourceHub