Diodes Incorporated
FZT1053AQTA
Bipolar Transistors - BJT Pwr Low Sat Transist
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Package
- SOT-223-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
18 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Maximum DC Collector Current
- 10 A
- Collector- Emitter Voltage VCEO Max
- 75 V
- Collector- Base Voltage VCBO
- 150 V
- Emitter- Base Voltage VEBO
- 7 V
- Collector-Emitter Saturation Voltage
- 350 mV
- Pd - Power Dissipation
- 3 W
- Gain Bandwidth Product fT
- 140 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
Show more parameters (6)
- Qualification
- AEC-Q101
- Continuous Collector Current
- 4.5 A
- Country of Origin
- CN
- DC Collector/Base Gain hfe Min
- 300 at 0.5 A, 2 V
- DC Current Gain hFE Max
- 1200 at 0.5 A, 2 V
- Unit Weight
- 0.003951 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.