onsemi
FDP3632
MOSFETs 100V 80a .9 Ohms/VGS=1V
Basic Information
View Datasheet ↗- Manufacturer
- onsemi
- Product Category
- MOSFETs
- Series
- FDP3632
- Package
- TO-220-3
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
25 parameters- Technology
- Si
- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 100 V
- Id - Continuous Drain Current
- 80 A
- Rds On - Drain-Source Resistance
- 7.5 mOhms
- Vgs - Gate-Source Voltage
- - 20 V, 20 V
- Vgs th - Gate-Source Threshold Voltage
- 4 V
- Qg - Gate Charge
- 84 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 310 W
Show more parameters (13)
- Channel Mode
- Enhancement
- Tradename
- PowerTrench
- Configuration
- Single
- Country of Assembly
- CN
- Country of Diffusion
- US
- Country of Origin
- US
- Fall Time
- 46 ns
- Rise Time
- 39 ns
- Transistor Type
- 1 N-Channel
- Typical Turn-Off Delay Time
- 96 ns
- Typical Turn-On Delay Time
- 30 ns
- Part # Aliases
- FDP3632_NL
- Unit Weight
- 0.068784 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.