Toshiba
HN1B01FU-GR,LF
Bipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - BJT
- Series
- HN1B01
- Package
- SOT-363-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Technology
- Si
- Transistor Polarity
- NPN, PNP
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 50 V
- Collector- Base Voltage VCBO
- 60 V, - 50 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 100 mV
- Maximum DC Collector Current
- 150 mA
- Gain Bandwidth Product fT
- 150 MHz, 120 MHz
- Maximum Operating Temperature
- + 125 C
- DC Current Gain hFE Max
- 400
- DC Collector/Base Gain hfe Min
- 120
Show more parameters (2)
- Pd - Power Dissipation
- 200 mW
- Unit Weight
- 0.000265 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.