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ON Semiconductor

CPH6122-TL-E

Bipolar Transistors - BJT BIP PNP 3A 30V

Basic Information

View Datasheet ↗
Manufacturer
ON Semiconductor
Product Category
Bipolar Transistors - BJT
Series
CPH6122
Package
SOT-23-3
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

14 parameters
Technology
Si
Transistor Polarity
PNP
Configuration
Single
Collector- Emitter Voltage VCEO Max
- 30 V
Collector- Base Voltage VCBO
- 30 V
Emitter- Base Voltage VEBO
- 5 V
Collector-Emitter Saturation Voltage
- 0.27 mV
Gain Bandwidth Product fT
400 MHz
Maximum Operating Temperature
+ 150 C
DC Current Gain hFE Max
560
Continuous Collector Current
- 3 A
DC Collector/Base Gain hfe Min
200
Show more parameters (2)
Pd - Power Dissipation
1.3 W
Unit Weight
0.000282 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

CPH6122-TL-E Specifications and Datasheet | ChipSourceHub