Central Semiconductor
PN3646
Bipolar Transistors - BJT SS Transistor
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- PN36
- Package
- TO-92-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 15 V
- Collector- Base Voltage VCBO
- 40 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 0.5 V
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 120
- Continuous Collector Current
- 300 mA
- DC Collector/Base Gain hfe Min
- 15
Show more parameters (3)
- Pd - Power Dissipation
- 350 mW
- Part # Aliases
- PBFREE PN3646
- Unit Weight
- 0.007654 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.