Central Semiconductor
PN4889 TIN/LEAD
Bipolar Transistors - BJT Through-Hole Transistor-Small Signal (<=1A) PNP High Voltage
Basic Information
- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- PN4889
- Package
- TO-92-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
Technical Specifications
14 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 150 V
- Collector- Base Voltage VCBO
- 150 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 500 mV
- Pd - Power Dissipation
- 1 W
- Gain Bandwidth Product fT
- 400 kHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- 100 mA
Show more parameters (2)
- DC Collector/Base Gain hfe Min
- 40 at 10 V, 1 mA
- DC Current Gain hFE Max
- 300 at 10 V, 10 mA
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.