STMicroelectronics
MD2001FX
Bipolar Transistors - BJT NPN Power Transistor
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- Bipolar Transistors - BJT
- Series
- MD2001FX
- Package
- ISOWATT-218FX-3
- Mounting Style
- Through Hole
- RoHS
- Compliant (source record)
Technical Specifications
18 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 700 V
- Collector- Base Voltage VCBO
- 9 V
- Emitter- Base Voltage VEBO
- 9 V
- Collector-Emitter Saturation Voltage
- 1.8 V
- Maximum DC Collector Current
- 18 A
- Gain Bandwidth Product fT
- 64 kHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 7
- Height
- 26.7 mm
Show more parameters (6)
- Length
- 5.7 mm
- Width
- 15.7 mm
- Continuous Collector Current
- 12 A
- DC Collector/Base Gain hfe Min
- 4.5
- Pd - Power Dissipation
- 58 W
- Unit Weight
- 0.271998 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.