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onsemi

NTMFS3D2N10MDT1G

MOSFETs PTNG 100V LOW Q3.2MOHM N-FET HE SO8FL

Basic Information

View Datasheet ↗
Manufacturer
onsemi
Product Category
MOSFETs
Series
NTMFS3D2N10MD
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

15 parameters
Technology
Si
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
100 V
Id - Continuous Drain Current
142 A
Rds On - Drain-Source Resistance
3.5 mOhms
Vgs - Gate-Source Voltage
- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage
4 V
Qg - Gate Charge
48 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
155 W
Show more parameters (3)
Channel Mode
Enhancement
Tradename
PowerTrench
Country of Origin
MY

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

NTMFS3D2N10MDT1G Specifications and Datasheet | ChipSourceHub