Diodes Incorporated
ZXTP2006E6TA
Bipolar Transistors - BJT 20V PNP Low Sat
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Series
- ZXTP200
- Package
- SOT-23-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- - 20 V
- Collector- Base Voltage VCBO
- 25 V
- Emitter- Base Voltage VEBO
- 7.5 V
- Collector-Emitter Saturation Voltage
- - 110 mV
- Maximum DC Collector Current
- 3.5 A
- Gain Bandwidth Product fT
- 110 MHz
- DC Current Gain hFE Max
- 900
- Height
- 1.3 mm
- Length
- 3.1 mm
- Width
- 1.8 mm
Show more parameters (4)
- Continuous Collector Current
- - 3.5 A
- DC Collector/Base Gain hfe Min
- 300
- Pd - Power Dissipation
- 1.1 W
- Unit Weight
- 0.000229 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.