NXP Semiconductors
MMRF1314HR5
RF MOSFET Transistors RF POWER LDMOS TRANSISTOR 1200-1400 MHz, 1000 W Peak, 52 V
Basic Information
View Datasheet ↗- Manufacturer
- NXP
- Brand
- NXP Semiconductors
- Product Category
- RF MOSFET Transistors
- Package
- NI-1230H-4S-4
- Mounting Style
- SMD/SMT
- Packaging
- Reel
Technical Specifications
16 parameters- Transistor Polarity
- N-Channel
- Technology
- Si
- Id - Continuous Drain Current
- 2.6 A
- Vds - Drain-Source Breakdown Voltage
- - 500 mV, 105 V
- Gain
- 17.7 dB
- Output Power
- 1 kW
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 150 C
- Operating Frequency
- 1.2 GHz to 1.4 GHz
- Type
- RF Power MOSFET
- Number of Channels
- 2 Channel
- Pd - Power Dissipation
- 909 W
Show more parameters (4)
- Vgs - Gate-Source Voltage
- - 6 V, 10 V
- Vgs th - Gate-Source Threshold Voltage
- 1.8 V
- Part # Aliases
- 935322438178
- Unit Weight
- 0.465355 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.