onsemi
30C02MH-TL-E
Bipolar Transistors - BJT BIP NPN 0.7A 30V
Basic Information
View Datasheet ↗- Manufacturer
- onsemi
- Product Category
- Bipolar Transistors - BJT
- Series
- 30C02MH
- Package
- SOT-323-3
- Mounting Style
- SMD/SMT
- Packaging
- MouseReel
Technical Specifications
17 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Maximum DC Collector Current
- 700 mA
- Collector- Emitter Voltage VCEO Max
- 30 V
- Collector- Base Voltage VCBO
- 40 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 85 mV
- Pd - Power Dissipation
- 600 mW
- Gain Bandwidth Product fT
- 540 MHz
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- 700 mA
Show more parameters (5)
- Country of Assembly
- CN
- Country of Diffusion
- JP
- Country of Origin
- JP
- DC Collector/Base Gain hfe Min
- 300
- Unit Weight
- 0.000255 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.