ON Semiconductor
NSS60100DMTTBG
Bipolar Transistors - BJT DUAL 60V 1A LOWVCESA
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Package
- WDFN-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 60 V
- Collector- Base Voltage VCBO
- 60 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- - 0.3 V
- Gain Bandwidth Product fT
- 155 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 140
- Continuous Collector Current
- 1 A
Show more parameters (3)
- DC Collector/Base Gain hfe Min
- 90
- Pd - Power Dissipation
- 2.27 W
- Unit Weight
- 0.000600 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.