Vishay Semiconductors
IRF9Z24SPBF
MOSFETs TO263 P-CH 60V 11A
Basic Information
View Datasheet ↗- Manufacturer
- Vishay
- Brand
- Vishay Semiconductors
- Product Category
- MOSFETs
- Series
- IRF9Z
- Package
- TO-263-3
- Mounting Style
- SMD/SMT
- Packaging
- Tube
Technical Specifications
16 parameters- Technology
- Si
- Transistor Polarity
- P-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 60 V
- Id - Continuous Drain Current
- 11 A
- Rds On - Drain-Source Resistance
- 280 mOhms
- Vgs - Gate-Source Voltage
- - 20 V, 20 V
- Vgs th - Gate-Source Threshold Voltage
- 4 V
- Qg - Gate Charge
- 19 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 60 W
Show more parameters (4)
- Channel Mode
- Enhancement
- Configuration
- Single
- Country of Origin
- CN
- Unit Weight
- 0.139332 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.