ON Semiconductor
NSM3005NZTAG
Bipolar Transistors - BJT MEA SMALL SIGNAL BJT AND
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Package
- UDFN-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 30 V
- Collector- Base Voltage VCBO
- 40 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 400 mV
- Maximum DC Collector Current
- 500 mA
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 100
- Continuous Collector Current
- 224 mA
- DC Collector/Base Gain hfe Min
- 20
Show more parameters (2)
- Pd - Power Dissipation
- 800 mW
- Unit Weight
- 0.000300 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.