Diodes Incorporated
BC847BLP4Q-7B
Bipolar Transistors - BJT General Purpose Transistor U-DFN1006-3 T&R 10K
Basic Information
- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Mounting Style
- SMD/SMT
- Packaging
- MouseReel
Technical Specifications
13 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Maximum DC Collector Current
- 100 mA
- Collector- Emitter Voltage VCEO Max
- 45 V
- Collector- Base Voltage VCBO
- 50 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 200 mV
- Pd - Power Dissipation
- 1 W
- Gain Bandwidth Product fT
- 100 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
Show more parameters (1)
- Country of Origin
- CN
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.