Toshiba
2SK2615(TE12L,F)
MOSFET N-Ch FET RDS .23 Ohm IDSS 100uA VDS 60V
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- MOSFET
- Series
- 2SK2615
- Package
- SC-62-3
- Mounting Style
- SMD/SMT
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
11 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 60 V
- Id - Continuous Drain Current
- 2 A
- Rds On - Drain-Source Resistance
- 440 mOhms
- Configuration
- Single
- Height
- 1.6 mm
- Length
- 4.6 mm
- Transistor Type
- 1 N-Channel
- Width
- 2.5 mm
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.