Central Semiconductor
MJE371
Bipolar Transistors - BJT PNP GP
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- MJE3
- Package
- TO-126
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
13 parameters- Transistor Polarity
- PNP
- Collector- Emitter Voltage VCEO Max
- 40 V
- Collector- Base Voltage VCBO
- 40 V
- Emitter- Base Voltage VEBO
- 4 V
- Collector-Emitter Saturation Voltage
- 1.7 V
- Maximum DC Collector Current
- 4 A
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- 4 A
- DC Collector/Base Gain hfe Min
- 40 at 1 A, 1 V
- Pd - Power Dissipation
- 40 W
- Part # Aliases
- MJE371 PBFREE
Show more parameters (1)
- Unit Weight
- 0.026843 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.