STMicroelectronics
BUTW92
Bipolar Transistors - BJT NPN Hi-Curr High Spd
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- Bipolar Transistors - BJT
- Series
- BUTW92
- Package
- TO-247-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 250 V
- Collector- Base Voltage VCBO
- 500 V
- Emitter- Base Voltage VEBO
- 7 V
- Collector-Emitter Saturation Voltage
- 0.8 V
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 65
- Height
- 20.15 mm (Max)
- Length
- 15.75 mm (Max)
- Width
- 5.15 mm (Max)
Show more parameters (4)
- Continuous Collector Current
- 60 A
- DC Collector/Base Gain hfe Min
- 9
- Pd - Power Dissipation
- 180 W
- Unit Weight
- 0.229281 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.