Toshiba
2SA2154MFV-GR(TPL3
Bipolar Transistors - BJT -150mA -50V
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - BJT
- Series
- 2SA2154MFV
- Package
- VESM-3
- Mounting Style
- SMD/SMT
- Packaging
- Reel
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 50 V
- Collector- Base Voltage VCBO
- - 50 V
- Emitter- Base Voltage VEBO
- - 5 V
- Maximum DC Collector Current
- 0.15 A
- Gain Bandwidth Product fT
- 80 MHz
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 400
- Height
- 0.5 mm
- Length
- 1.2 mm
- Width
- 0.8 mm
Show more parameters (3)
- Continuous Collector Current
- - 150 mA
- DC Collector/Base Gain hfe Min
- 200
- Pd - Power Dissipation
- 150 mW
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.