ON Semiconductor
MUN5216DW1T1G
Bipolar Transistors - Pre-Biased 100mA 50V BRT Dual NPN
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - Pre-Biased
- Series
- MUN5216DW1
- Package
- SOT-363-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Configuration
- Dual
- Transistor Polarity
- NPN
- Typical Input Resistor
- 4.7 kOhms
- DC Collector/Base Gain hfe Min
- 160
- Collector- Emitter Voltage VCEO Max
- 50 V
- Continuous Collector Current
- 0.1 A
- Peak DC Collector Current
- 100 mA
- Pd - Power Dissipation
- 187 mW
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 160 at 5 mA at 10 V
- Height
- 0.9 mm
Show more parameters (3)
- Length
- 2 mm
- Width
- 1.25 mm
- Unit Weight
- 0.000265 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.