NXP Semiconductors
MRFX035HR5
RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 35 W CW over 1.8-512 MHz, 65 V
Basic Information
View Datasheet ↗- Manufacturer
- NXP
- Brand
- NXP Semiconductors
- Product Category
- RF MOSFET Transistors
- Series
- MRFX035H
- Package
- NI-360H-2SB
- Mounting Style
- Screw Mount
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Polarity
- N-Channel
- Technology
- Si
- Id - Continuous Drain Current
- 100 mA
- Vds - Drain-Source Breakdown Voltage
- 193 V
- Gain
- 24.8 dB
- Output Power
- 35 W
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 150 C
- Operating Frequency
- 1.8 MHz to 512 MHz
- Type
- RF Power MOSFET
- Number of Channels
- 1 Channel
- Pd - Power Dissipation
- 154 W
Show more parameters (3)
- Vgs - Gate-Source Voltage
- - 6 V, 10 V
- Vgs th - Gate-Source Threshold Voltage
- 1.7 V
- Part # Aliases
- 935376627178
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.