Diodes Incorporated
HBDM60V600W-7
Bipolar Transistors - BJT 200mW Half H-Bridge
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Series
- HBDM60
- Package
- SOT-363-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
18 parameters- Transistor Polarity
- NPN, PNP
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- - 60 V, 65 V
- Collector- Base Voltage VCBO
- - 60 V, 80 V
- Emitter- Base Voltage VEBO
- - 5.5 V, 6 V
- Collector-Emitter Saturation Voltage
- - 0.5 V
- Maximum DC Collector Current
- 0.5 A
- Gain Bandwidth Product fT
- 100 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 300
- Height
- 1 mm
Show more parameters (6)
- Length
- 2.2 mm
- Width
- 1.35 mm
- Continuous Collector Current
- - 600 mA, 500 mA
- DC Collector/Base Gain hfe Min
- 50
- Pd - Power Dissipation
- 200 mW
- Unit Weight
- 0.000212 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.