Qorvo
QPD3601
RF JFET Transistors 3.4-3.6GHz 50V 180 Watt GaN
Basic Information
View Datasheet ↗- Manufacturer
- Qorvo
- Product Category
- RF JFET Transistors
- Series
- QPD
- Package
- NI400-2
- Mounting Style
- SMD/SMT
- Packaging
- Waffle
- RoHS
- Compliant (source record)
Technical Specifications
17 parameters- Transistor Type
- HEMT
- Technology
- GaN SiC
- Gain
- 22 dB
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 50 V
- Id - Continuous Drain Current
- 360 mA
- Output Power
- 180 W
- Maximum Drain Gate Voltage
- 55 V
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 85 C
- Pd - Power Dissipation
- 60.9 W
- Configuration
- Single
Show more parameters (5)
- Operating Frequency
- 3.4 GHz to 3.6 GHz
- Operating Temperature Range
- - 40 C to + 85 C
- Moisture Sensitive
- Yes
- Vgs th - Gate-Source Threshold Voltage
- - 2.7 V
- Part # Aliases
- 1130556
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.